Effect of B–O co-doping on the properties of HPHT diamond single crystals in the Fe–Ni–C system
Влияние совместного легирования бором и кислородом на свойства монокристаллов алмаза, синтезированных методом ВДТВ в системе Fe–Ni–C
2026-01-01
SCID: 54.1/3vaguzu2
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B–O bond formationB–O co-dopingFe–Ni–C systemHPHT diamond single crystalscarrier mobility
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Abstract (AI)
Boron-oxygen co-doped diamond was synthesized via the HPHT method, with B–O bond formation relieving B-induced lattice stress, delivering higher carrier mobility than pure BDD, ideal for high-performance semiconductors.
Key Findings
1
Boron-oxygen co-doped diamond single crystals were synthesized using the high-pressure high-temperature (HPHT) method in the Fe–Ni–C system.
2
B–O co-doping yields higher carrier mobility than pure boron-doped diamond (BDD).
3
Formation of B–O bonds relieves boron-induced lattice stress in the diamond crystal lattice.
4
Improved carrier mobility from B–O co-doping makes these diamonds suitable for high-performance semiconductor applications.
Research Object
Boron–oxygen co-doped HPHT diamond single crystals in the Fe–Ni–C system
Research Subject
Effect of B–O co-doping (B–O bond formation) on lattice stress relief and carrier mobility compared with pure boron-doped diamond for high-performance semiconductor applications
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2026-01-01
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