Electron Localization Determines Defect Formation on Ceria Substrates
Локализация электронов определяет образование дефектов на подложках из диоксида церия
2005-07-28
SCID: 54.1/6phwzbwn
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Ceria (CeO2) substratesDensity functional calculationsElectron localizationOxygen vacancy formationScanning tunneling microscopy
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Abstract (AI)
The high performance of ceria (CeO2) as an oxygen buffer and active support for noble metals in catalysis relies on an efficient supply of lattice oxygen at reaction sites governed by oxygen vacancy formation. We used high-resolution scanning tunneling microscopy and density functional calculations to unravel the local structure of surface and subsurface oxygen vacancies on the (111) surface. Electrons left behind by released oxygen localize on cerium ions. Clusters of more than two vacancies exclusively expose these reduced cerium ions, primarily by including subsurface vacancies, which therefore play a crucial role in the process of vacancy cluster formation. These results have implications for our understanding of oxidation processes on reducible rare-earth oxides.
Key Findings
1
Clusters containing more than two oxygen vacancies exclusively expose reduced cerium ions and preferentially incorporate subsurface vacancies.
2
Electrons left by released oxygen localize on cerium ions, producing locally reduced cerium species.
3
High-resolution scanning tunneling microscopy and density functional calculations resolve surface and subsurface oxygen-vacancy structures on CeO2(111).
4
Subsurface vacancies play a crucial role in oxygen-vacancy cluster formation, shaping oxidation processes on reducible rare-earth oxides.
Research Object
Surface and subsurface oxygen vacancies on the CeO2(111) surface
Research Subject
Electron localization on cerium ions and its role in the formation and structure of oxygen-vacancy clusters, particularly the contribution of subsurface vacancies
Publication Details
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2005-07-28
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