Minority-carrier injection annealing of electron irradiation-induced defects in InP solar cells
Отжиг дефектов, индуцированных электронным облучением, посредством инжекции носителей меньшинства в солнечных элементах на InP
1984-02-15
SCID: 54.1/6s47y6cf
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InP solar cellselectron irradiation-induced defectsforward bias annealinglight-induced annealingminority-carrier injection annealing
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Abstract (AI)
The first observation of minority-carrier injection annealing of radiation-induced defects in InP is reported. Minority-carrier injection due to both forward bias application and light illumination at room temperature after electron irradiation is shown to enhance defect annealing in p-InP and to result in the recovery of InP solar cell properties. These results suggest that most InP-based devices under minority-carrier injection mode operation conditions are more radiation resistant than any other material-based devices.
Key Findings
1
Enhanced defect annealing leads to recovery of InP solar cell properties following electron irradiation.
2
First reported observation of minority-carrier injection annealing of radiation-induced defects in InP.
3
Inference that InP-based devices operating under minority-carrier injection conditions are more radiation resistant than devices made from other materials.
4
Minority-carrier injection via forward bias or light illumination at room temperature enhances defect annealing in p-InP after electron irradiation.
Research Object
Electron-irradiated p-type indium phosphide (InP) solar cells
Research Subject
Minority-carrier injection annealing of radiation-induced defects and resulting recovery of solar-cell properties under forward-bias or light illumination at room temperature
Publication Details
Publication Date
1984-02-15
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