High‐performance charge plasma based normally OFF GaN MOSFET

A high‐performance enhancement‐mode charge plasma based gallium nitride (CP‐GaN) MOSFET is stimulated. Here, metals of same work functions are used to induce n ‐ type charge plasma in an undoped GaN film to realise source and drain regions of a GaN MOSFET. The proposed device is not hetrostructure like the conventional GaN/AlGaN devices and is hence free from hetero‐epitaxial defects and inverse piezoelectric effects, and can have reduced leakage and can be more reliable. An extensive simulation study has revealed that the proposed CP‐GaN device exhibits a threshold voltage of 1.4 V, large I ON / I OFF ratio of 10 8 and transconductance ( g m ) of 308 mS/mm.