A Compact 10-MHz RC Frequency Reference With a Versatile Temperature Compensation Scheme

Компактный RC опорный генерaтор частоты 10 МГц с универсальной схемой температурной компенсации
Kofi A. A. Makinwa, Sining Pan, Xiaomeng An, Zheru Yu, Hui Jiang
2023-11-07

RC frequency referencefrequency-locked loop (FLL)polysilicon and diffusion resistorstemperature compensationtrimmed capacitor frequency trim
This article presents the design and implementation of a compact CMOS RC frequency reference. It consists of a frequency-locked loop (FLL) that locks the period of a voltage-controlled oscillator (VCO) to the time an RC network takes to charge to a reference voltage. Conventionally, an RC time constant with a near-zero temperature coefficient (TC) is realized by using a trimmed network of resistors with different TCs. In this work, such a network is used to realize a temperature-dependent reference voltage whose TC cancels that of a single-resistor RC time constant. Compared with the conventional approach, which requires resistors with TCs of opposite polarity, the proposed approach can be implemented with resistors with TCs of similar polarity, and so it can be implemented in most CMOS processes. To compensate for RC spread, a trimmed capacitor is used to adjust the nominal frequency. Two prototype chips were made, one based on p- /n-polysilicon resistors and other based on silicided/p-diffusion resistors. Fabricated in a standard 180-nm CMOS technology, the polysilicon-based prototype has an active area of 0.01 mm2 and an absolute inaccuracy of ±2800 ppm from −45 °C to 125 °C with a fixed TC-trim and a one-point frequency trim. After one week of accelerated aging at 150 °C, however, significant drift (5000 ppm) was observed. The diffusion-based prototype exhibits greater inaccuracy (±14 400 ppm) but much less drift (600 ppm).
1
A compact CMOS RC frequency reference using an FLL locks a VCO period to the RC network charge time to generate a 10-MHz reference.
2
After one week of accelerated aging at 150 °C, the polysilicon prototype showed significant drift of 5000 ppm.
3
Diffusion-based prototype shows larger inaccuracy (±14,400 ppm) but much lower aging drift (600 ppm).
4
Polysilicon-based prototype (180-nm CMOS) achieves active area 0.01 mm2 and absolute inaccuracy ±2800 ppm from −45 °C to 125 °C with fixed TC-trim and one-point frequency trim.
5
Proposed temperature compensation uses a trimmed resistor network to create a temperature-dependent reference voltage that cancels a single-resistor RC time constant TC.
6
RC spread is compensated by a trimmed capacitor used to adjust the nominal frequency.
7
The compensation scheme requires resistors with similar TC polarity, enabling implementation in most CMOS processes (unlike conventional opposite-polarity resistor requirement).

Compact CMOS RC frequency reference (10-MHz) implemented with a frequency-locked loop, VCO, and RC network in 180-nm CMOS

Versatile temperature compensation scheme that uses a temperature-dependent reference voltage derived from a trimmed resistor network to cancel the RC time-constant temperature coefficient, plus capacitor trimming for nominal-frequency adjustment and evaluation of accuracy, temperature coefficient, and aging/drift across resistor implementations

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2023-11-07
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Authors
Kofi A. A. Makinwa
Sining Pan
Xiaomeng An
Zheru Yu
Hui Jiang
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