The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs
Эффект излома при криогенных температурах в глубоко субмикронных HEMT AlGaN/GaN
2009-02-13
SCID: 54.1/9b8ju4uf
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AlGaN/GaN HEMTscryogenic temperaturesdeep submicron transistorsfluorine plasma etchingkink effect
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Abstract (AI)
The kink effect has been studied in deep submicron AlGaN/GaN high-electron mobility transistors by measuring their DC, RF and pulsed performance at cryogenic temperatures. In these devices, the kink effect is mainly due to traps: it appears at T4/O2plasma) used for etching the passivant, treatment which creates traps below and around the gate. This link between the kink and the etching treatment has also been confirmed in optically defined gate devices with different fluorine plasma exposure times.
Key Findings
1
The effect appears after T4/O2 plasma etching of the passivation layer, which creates traps below and around the gate.
2
The kink effect in deep-submicron AlGaN/GaN HEMTs was investigated through DC, RF, and pulsed measurements at cryogenic temperatures.
3
The kink effect is primarily attributed to traps in these devices rather than an unspecified intrinsic mechanism.
4
The relationship between the kink effect and etching-induced traps was confirmed in optically defined-gate devices with varying fluorine-plasma exposure times.
Research Object
Deep submicron AlGaN/GaN high-electron mobility transistors (HEMTs) at cryogenic temperatures
Research Subject
The trap-induced kink effect and its dependence on passivation etching and fluorine-plasma exposure, as reflected in DC, RF, and pulsed performance
Publication Details
Publication Date
2009-02-13
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