High Quality Aluminum Oxide Passivation Layer for Crystalline Silicon Solar Cells Deposited by Parallel-Plate Plasma-Enhanced Chemical Vapor Deposition
Высококачественный пассивирующий слой оксида алюминия для солнечных элементов на основе кристаллического кремния, нанесённый методом плазмохимического осаждения из газовой фазы в параллельной пластинчатой системе
2009-12-18
SCID: 54.1/9k3rfjq7
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aluminum oxide passivationcrystalline silicon solar cellsplasma-enhanced chemical vapor depositionsurface recombination velocitythermal annealing
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Abstract (AI)
We investigated hydrogenated aluminum oxide (a-Al 1- x O x :H) as a high quality rear surface passivation layer of crystalline silicon solar cells. The a-Al 1- x O x :H films were deposited by plasma-enhanced chemical vapor deposition (PECVD) using a mixture of trimethylaluminum (TMA), carbon dioxide (CO 2 ), and hydrogen (H 2 ) at a low substrate temperature of about 200 °C. The ratio of CO 2 to TMA during deposition and thermal annealing after the film deposition are the key factors in achieving high quality passivation. A 28-nm-thick a-Al 1- x O x :H film deposited by PECVD showed a low surface recombination velocity of about 10 cm/s.
Key Findings
1
A 28-nm-thick hydrogenated amorphous aluminum oxide film achieved a low surface recombination velocity of approximately 10 cm/s.
2
Hydrogenated amorphous aluminum oxide was investigated as a high-quality rear-surface passivation layer for crystalline silicon solar cells.
3
The CO₂-to-TMA ratio during deposition and post-deposition thermal annealing were identified as key factors controlling passivation quality.
4
The films were deposited by parallel-plate PECVD from trimethylaluminum, carbon dioxide, and hydrogen at a low substrate temperature of approximately 200 °C.
Research Object
Hydrogenated aluminum oxide (a-Al₁₋ₓOₓ:H) rear-surface passivation layers on crystalline silicon solar cells
Research Subject
The effects of CO₂-to-TMA deposition ratio and post-deposition thermal annealing on surface passivation quality, characterized by surface recombination velocity
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2009-12-18
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