Etching Behavior and Electrochemistry of a Bi‐Sr‐Ca‐Cu‐O Superconductor in Acidic Media
Травление и электрохимия сверхпроводника Bi-Sr-Ca-Cu-O в кислых средах
1989-08-01
SCID: 54.1/9p4qufqe
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Bi-Sr-Ca-Cu-O superconductoracid dissolutioncontrolled etchingelectrochemical techniquesrotating ring-disk methods
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Abstract (AI)
Bismuth strontium calcium cuprate superconductors with nominal composition, , have been examined by electrochemical techniques and are found to be both highly oxidizing compounds and reactive towards hydrogen ions. The chemical reactivity of 84K bismuth strontium calcium cuprate is similar to that of . The dissolution reaction in acid is intrinsically fast; we observe H + mass transport control in perchlorate solution. Dissolution rates can be altered and made selective by surface filming and post reactions of Bi +3 , as in Cl − solution. The stoichiometries of the acid reactions and for the etching of the by ethylenediaminetetraacetate have been determined by rotating ring‐disk methods. Several etching solutions readily adaptable to controlled patterning or removal of these substrates have been demonstrated.
Key Findings
1
Acid dissolution is intrinsically fast, with the process becoming controlled by hydrogen-ion mass transport in perchlorate solution.
2
Bi-Sr-Ca-Cu-O superconductors are highly oxidizing and highly reactive toward hydrogen ions in acidic media.
3
Rotating ring-disk measurements established acid-reaction and EDTA-etching stoichiometries, and several solutions enabled controlled substrate patterning or removal.
4
Surface-film formation and subsequent Bi(III) reactions, particularly in chloride solution, can modify and selectively control dissolution rates.
5
The 84 K Bi-Sr-Ca-Cu-O compound has chemical reactivity similar to the corresponding reference bismuth-based cuprate identified in the abstract.
Research Object
84 K bismuth strontium calcium cuprate (Bi–Sr–Ca–Cu–O) superconductors in acidic etching media
Research Subject
Electrochemical reactivity, acid dissolution and selective etching behavior, including reaction stoichiometry and mass-transport control
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1989-08-01
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