Design of X-band 40 W Pulse-Driven GaN HEMT power amplifier
Разработка импульсного усилителя мощности на GaN HEMT диапазона X мощностью 40 Вт
2012-12-01
SCID: 54.1/ardjuuq6
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EM co-simulationX-band GaN HEMT power amplifierimpedance transformer matching circuitload-pull measurementpulse-driven power amplifier
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Abstract (AI)
In this paper, a design of X-band (9~10 GHz) 40 W Pulse-Driven GaN HEMT power amplifier is presented. The selected active device is a commercially available GaN HEMT chip from TriQuint. The optimum input and output impedances of the GaN HEMT are extracted from load-pull measurement using automated tuner system from Maury Inc. and load-pull simulation using nonlinear model from TriQuint. The combined impedance transformer type matching circuit of the power amplifier is designed using EM co-simulation. The fabricated power amplifier which is 15×17.8 mm2shows an efficiency of above 32%, power gain of 8.7~6.7 dB and output power of 46.7~44.7 dBm at 9~10 GHz with pulse width of 10 μsec and duty of 10 %.
Key Findings
1
A 40 W pulse-driven GaN HEMT power amplifier was designed for the X-band frequency range of 9–10 GHz.
2
An EM-co-simulated combined impedance-transformer matching network was implemented in the amplifier design.
3
Optimal transistor input and output impedances were extracted by combining automated load-pull measurements with nonlinear-model load-pull simulations.
4
Performance was measured using 10 μs pulses at a 10% duty cycle.
5
The fabricated 15×17.8 mm² amplifier achieved over 32% efficiency, 8.7–6.7 dB power gain, and 46.7–44.7 dBm output power across 9–10 GHz.
Research Object
X-band 40 W pulse-driven GaN HEMT power amplifier
Research Subject
Design and performance characteristics, including impedance matching, efficiency, power gain, and output power, under 9–10 GHz pulsed operation
Publication Details
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2012-12-01
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