Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements
Характеризация эффекта излома в HEMT AlGaN/GaN методом измерений на постоянном токе и переходных процессов тока стока
2012-09-01
SCID: 54.1/b762zzgf
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AlGaN/GaN HEMTsSiC substratedrain current transient spectroscopykink effecttrap activation energy
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Abstract (AI)
This study reports on detection and characterization of parasitic effects of AlGaN/GaN HEMTs on SiC substrate. First, experimental conditions impact and temperature effects on static IDS(VDS) characteristics are studied between 160 and 390K. Then, dependences on temperature, electric field and integration time of the kink effect are demonstrated with DC and pulsed measurements. Two traps are identified by isothermal drain current transient spectroscopy : an emission process and a capture process with activation energy of 0.58eV and 0.64eV respectively.
Key Findings
1
Isothermal drain current transient spectroscopy identifies two traps associated with emission and capture processes.
2
Static IDS(VDS) characteristics are shown to depend on experimental conditions and temperature across 160–390 K.
3
The identified emission and capture processes have activation energies of 0.58 eV and 0.64 eV, respectively.
4
The kink effect exhibits dependencies on temperature, electric field, and integration time, demonstrated through DC and pulsed measurements.
5
The study detects and characterizes parasitic effects in AlGaN/GaN HEMTs fabricated on SiC substrates.
Research Object
AlGaN/GaN HEMTs on a SiC substrate
Research Subject
The kink effect and associated trap-related parasitic behavior, including its temperature, electric-field, and integration-time dependences and the traps’ emission and capture processes
Publication Details
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2012-09-01
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