InAs/GaSb type-II superlattice infrared detectors: Future prospect
Инфракрасные детекторы на основе InAs/GaSb тип-II сверхрешеток: перспективы
2017-08-21
SCID: 54.1/crxq7egp
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Auger recombinationHgCdTe focal plane arrays (FPAs)InAs/GaSb type-II superlatticesShockley-Read-Hall lifetime (SRH lifetime)type-II superlattice (T2SL) infrared detectors
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Abstract (AI)
Investigations of antimonide-based materials began at about the same time as HgCdTe ternary alloys—in the 1950s, and the apparent rapid success of their technology, especially low-dimensional solids, depends on the previous five decades of III-V materials and device research. However, the sophisticated physics associated with the antimonide-based bandgap engineering concept started at the beginning of 1990s gave a new impact and interest in development of infrared detector structures within academic and national laboratories. The development of InAs/GaSb type-II superlattices (T2SLs) results from two primary motivations: the perceived challenges of reproducibly fabricating high-operability HgCdTe focal plane arrays (FPAs) at reasonable cost and the theoretical predictions of lower Auger recombination for type T2SL detectors compared with HgCdTe. Second motivation—lower Auger recombination should be translated into a fundamental advantage for T2SL over HgCdTe in terms of lower dark current and/or higher operating temperature, provided other parameters such as Shockley-Read-Hall (SRH) lifetime are equal. InAs/GaSb T2SL photodetectors offer similar performance to HgCdTe at an equivalent cut-off wavelength, but with a sizeable penalty in operating temperature, due to the inherent difference in SRH lifetimes. It is predicted that since the future infrared (IR) systems will be based on the room temperature operation of depletion-current limited arrays with pixel densities that are fully consistent with background- and diffraction-limited performance due to the system optics, the material system with long SRH lifetime will be required. Since T2SLs are very much resisted in attempts to improve its SRH lifetime, currently the only material that meets this requirement is HgCdTe. Due to less ionic chemical bonding, III-V semiconductors are more robust than their II-VI counterparts. As a result, III-V-based FPAs excel in operability, spatial uniformity, temporal stability, scalability, producibility, and affordability—the so-called “ibility” advantages.
Key Findings
1
Current inability to significantly improve SRH lifetime in T2SLs means HgCdTe remains the only material meeting long-SRH-lifetime requirements for future room-temperature, depletion-current-limited IR arrays.
2
III-V based FPAs (including T2SLs) offer practical advantages over II-VI materials—better operability, spatial uniformity, temporal stability, scalability, producibility, and affordability.
3
In practice, InAs/GaSb T2SL photodetectors show similar performance to HgCdTe at equivalent cut-off wavelength but require lower operating temperature due to shorter SRH lifetimes.
4
InAs/GaSb type-II superlattices (T2SLs) were developed to address fabrication challenges and predicted lower Auger recombination versus HgCdTe.
5
Lower Auger recombination in T2SLs could theoretically yield lower dark current or higher operating temperature if SRH lifetimes were comparable to HgCdTe.
Research Object
InAs/GaSb type-II superlattice (T2SL) infrared photodetectors
Research Subject
Comparative performance characteristics and prospects focusing on dark current, operating temperature, Auger recombination, Shockley–Read–Hall (SRH) lifetime, operability, spatial uniformity, temporal stability, scalability and producibility relative to HgCdTe for future IR systems
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2017-08-21
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