A Design of X-Band 40W Pulse-Driven GaN HEMT Power Amplifier
Разработка импульсного силового усилителя мощности на GaN HEMT диапазона X мощностью 40 Вт
2013-01-01
SCID: 54.1/d6zgzs2m
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40 W pulse-driven operationEM co-simulationX-band GaN HEMT power amplifiercombined impedance transformerpre-match load-pull measurement
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Abstract (AI)
In this paper, a systematic design of X-band (9-10GHz) 40W pulse-driven GaN HEMT power amplifier is presented. The design includes device evaluation, verification of designed matching circuits, and measurements of the designed power amplifier. Firstly, the optimum input and output impedances for the selected GaN HEMT chip from TriQuint Semiconductor Inc. are evaluated using load-pull measurement. The selected GaN HEMT shows extremely low optimum impedances, which are obtained using a pre-match load-pull method due to the limitation of the tuning impedance range of conventional impedance tuners. We propose a novel extraction of the optimum impedances with general pre-match circuits. The extracted optimum impedances are found to be close to those computed, using the large signal model supplied from TriQuint Semiconductor. Using the optimum impedances, the matching circuits of the power amplifier are designed employing the combined impedance transformer type based on EM co-simulation. The fabricated power amplifier has a size of 15×17.8mm2, an efficiency above 45%, power gain of 7.7-9.9dB and output power of 47-44.8dBm at 9-10GHz with pulse width of 10µsec and duty of 10%.
Key Findings
1
A systematic design methodology is presented for a 9–10 GHz, 40 W pulse-driven GaN HEMT power amplifier.
2
Extracted optimum impedances closely agree with values computed from TriQuint Semiconductor’s supplied large-signal model.
3
Matching networks use a combined impedance-transformer topology designed through electromagnetic co-simulation and verification.
4
Pre-match load-pull measurements and a novel extraction method determine extremely low optimum input and output impedances beyond conventional tuner ranges.
5
The fabricated 15×17.8 mm² amplifier achieves above 45% efficiency, 7.7–9.9 dB gain, and 47–44.8 dBm output power at 9–10 GHz using 10 μs pulses and 10% duty cycle.
Research Object
X-band 40 W pulse-driven GaN HEMT power amplifier
Research Subject
Design and performance characteristics of the power amplifier, including optimum input/output impedances, matching-circuit implementation, efficiency, power gain, and output power at 9–10 GHz
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2013-01-01
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