Quantum confinement in Si nanocrystals

Квантовое ограничение в нанокристаллах Si
B. Delley, E. F. Steigmeier
1993-01-15

Si nanocrystalsdensity-functional approachdirect band gaposcillator strengthquantum confinement
The electronic structure of nanocrystalline Si which shows visible photoluminescence is calculated using the density-functional approach for finite structures. Except for geometry this is the same theory as for first-principles band structures of semiconductors and other solids. Our results for clusters ranging up to 706 Si atoms suggest that the band gap scales linearly with ${\mathit{L}}^{\mathrm{\ensuremath{-}}1}$, where L is the cluster diameter. For such clusters it is found that dipole transitions across the gap are symmetry allowed. The finite structures thus show a direct band gap which is considerably larger than the one of bulk silicon. For larger clusters we find a strong decrease of oscillator strength, consistent with the occurrence of the indirect gap in the bulk limit.
1
Density-functional calculations for Si nanocrystals up to 706 atoms show that the band gap scales linearly with inverse cluster diameter, L⁻¹.
2
Dipole transitions across the band gap are symmetry allowed in the studied finite silicon clusters.
3
Finite silicon nanocrystals exhibit a direct band gap substantially larger than bulk silicon’s gap, consistent with quantum confinement.
4
For larger clusters, oscillator strength decreases strongly, indicating a transition toward the indirect-gap behavior of bulk silicon.

visible-photoluminescent nanocrystalline silicon clusters

Size-dependent electronic structure, band-gap scaling, dipole-transition symmetry, and oscillator-strength evolution toward the bulk indirect-gap limit

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1993-01-15
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B. Delley
E. F. Steigmeier
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