Spin-Dependent Transport in Molecular Tunnel Junctions
Спин-зависимый транспорт в молекулярных туннельных переходах
2004-09-20
SCID: 54.1/hp4efe3n
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magnetic tunnel junctionsmolecular tunnel junctionsself-assembled monolayerspin-dependent transportspin-polarized transport
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Abstract (AI)
We present measurements of magnetic tunnel junctions made using a self-assembled-monolayer molecular barrier. Ni-octanethiol-Ni samples were fabricated in a nanopore geometry. The devices exhibit significant changes in resistance as the angle between the magnetic moments in the two electrodes is varied, demonstrating that low-energy electrons can traverse the molecular barrier while remaining spin polarized. An analysis of the voltage and temperature dependence of the data suggests that the spin-polarized transport signals can be degraded by localized states in the molecular barriers.
Key Findings
1
Device resistance changes significantly with the relative angle between electrode magnetizations, demonstrating spin-dependent transport through the molecular barrier.
2
Low-energy electrons traverse the molecular barrier while retaining spin polarization.
3
Ni-octanethiol molecular barriers were incorporated into nanopore magnetic tunnel junctions with nickel electrodes.
4
Voltage- and temperature-dependent analysis indicates that localized states in the molecular barrier can degrade spin-polarized transport signals.
Research Object
Ni-octanethiol-Ni magnetic tunnel junctions with a self-assembled molecular barrier
Research Subject
Spin-polarized electron transport and its degradation by localized states in the molecular barrier, including resistance dependence on electrode magnetization angle, voltage, and temperature
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Publication Date
2004-09-20
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