High Broad‐Band Photoresponsivity of Mechanically Formed InSe–Graphene van der Waals Heterostructures

Kostya S. Novoselov, A. Patanè, L. Eaves, O. Makarovsky, Z. R. Kudrynskyi, Z. D. Kovalyuk, Garry W. Mudd, Simon A. Svatek, Lee Hague, Christopher J. Mellor, Peter H. Beton, Evgeny E. Vdovin, Alexander J. Marsden, Neil R. Wilson
2015-05-15
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InSe–graphene van der Waals heterostructuresbroad-band photoresponsivityexternal quantum efficiency (EQE)specific detectivity (D*)vertical and planar graphene–n-InSe–graphene photodetectors
Abstract (AI)
High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures is achieved by exploiting the broad-band transparency of graphene, the direct bandgap of InSe, and the favorable band line up of InSe with graphene. The photoresponsivity exceeds that for other van der Waals heterostructures and the spectral response extends from the near-infrared to the visible spectrum.
Key Findings
1
Graphene electrodes form favorable band alignment and accumulation layers at graphene/InSe interfaces, creating Ohmic contacts that enhance carrier extraction compared to Au contacts (≈10^4 improvement in R/EQE).
2
Mechanically formed graphene–InSe van der Waals heterostructures exhibit very high broadband photoresponsivity, up to ≈10^5 A W−1 at λ = 633 nm in vertical device architectures.
3
Photoresponsivity depends strongly on incident power and bias: R decreases with increasing P (due to reduced τl or increased τt) and scales roughly linearly with Vs via τt ∝ l^2/μVs.
4
Planar graphene–n-InSe–graphene devices show linear, symmetric I–V characteristics, fast dark-current response (τr, τd < 0.1 ms) and photocurrent rise/decay times τr ≈ 1 ms, τd ≈ 10 ms.
5
Spectral photoresponse extends from near-infrared to visible, with R and EQE decreasing by factors ≈30 and ≈50 respectively as photon energy decreases from ≈2 to ≈1.3 eV.
Research Object

Mechanically formed InSe–graphene van der Waals heterostructures (planar and vertical graphene–n-InSe–graphene devices)

Research Subject

High broad-band photoresponsivity and related photoelectrical performance (spectral response, responsivity R, EQE, detectivity D*, temporal response, and dependence on bias, gate voltage and optical power) of the InSe–graphene heterostructures

Publication Details
Publication Date
2015-05-15
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Authors
Kostya S. Novoselov
A. Patanè
L. Eaves
O. Makarovsky
Z. R. Kudrynskyi
Z. D. Kovalyuk
Garry W. Mudd
Simon A. Svatek
Lee Hague
Christopher J. Mellor
Peter H. Beton
Evgeny E. Vdovin
Alexander J. Marsden
Neil R. Wilson
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