Architecture of composite multilayer semiconductor nanostructures
Архитектура композитных многослойных полупроводниковых наноструктур
2023-01-01
SCID: 54.1/ju7cfjru
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composite multilayer semiconductor nanostructuresmathematical modelphysics-based modelingresonant-tunnelling AlGaAs nanoheterostructures
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Abstract (AI)
The problem of ensuring the operational parameters of composite multilayer semiconductor nanoscale structures at the design technology stages is solved. A mathematical model based on the physics of processes occurring in the structure during operation is developed. The problem is solved for the resonant-tunnelling AlGaAs nanoheterostructures.
Key Findings
1
A mathematical model was developed to predict operational parameters of composite multilayer semiconductor nanoscale structures based on underlying physical processes.
2
The methodology was specifically solved/applied for resonant-tunnelling AlGaAs nanoheterostructures.
3
The proposed modeling approach applies to design and technology stages to ensure desired operational characteristics of these nanostructures.
Research Object
Resonant-tunnelling AlGaAs nanoheterostructures
Research Subject
Operational parameters and their assurance via a physics-based mathematical model for composite multilayer semiconductor nanoscale structures during design and technology stages
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2023-01-01
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