Magnetoresistive Sensor Development Roadmap (Non-Recording Applications)

Дорожная карта развития магниторезистивных датчиков (нерекордирующие приложения)
Olga Kazakova, Joseph E. Davies, S. H. Liou, Alexander S. Samardak, Alexey V. Ognev, Xiaolu Yin, CheolGi Kim, Chi Wah Leung, S. N. Piramanayagam, Philip W. T. Pong, Shan X. Wang, Chao Zheng, Ke Zhu, Susana Cardoso de Freitas, Jen-Yuan Chang, Peter Eames, Paulo P. Freitas, Pavel Ripka, Kwang‐Ho Shin, Shiyuan Tong, Mean-Jue Tung, Songsheng Xue
2019-03-05

MR sensor roadmapMagnetoresistive sensorsR&D planningbiomedical applicationscritical sensor milestonesflexible electronicshuman–computer interactionlogistic growth modelmagnetometersnavigation and transportationnon-destructive evaluationnon-recording applicationspatent and publication analysisposition sensingsensor development timescales
Magnetoresistive (MR) sensors have been identified as promising candidates for the development of high-performance magnetometers due to their high sensitivity, low cost, low power consumption, and small size. The rapid advance of MR sensor technology has opened up a variety of MR sensor applications. These applications are in different areas that require MR sensors with different properties. Future MR sensor development in each of these areas requires an overview and a strategic guide. An MR sensor roadmap (non-recording applications) was therefore developed and made public by the Technical Committee of the IEEE Magnetics Society with the aim to provide an research and development (R&D) guide for MR sensors intended to be used by industry, government, and academia. The roadmap was developed over a three-year period and coordinated by an international effort of 22 taskforce members from ten countries and 17 organizations, including universities, research institutes, and sensor companies. In this paper, the current status of MR sensors for non-recording applications was identified by analyzing the patent and publication statistics. As a result, timescales for MR sensor development were established and critical milestones for sensor parameters were extracted in order to gain insight into potential MR sensor applications (non-recording). Five application areas were identified, and five MR sensor roadmaps were established. These include biomedical applications, flexible electronics, position sensing and human–computer interactions, non-destructive evaluation and monitoring, and navigation and transportation. Each roadmap was analyzed using a logistic growth model, and new opportunities were predicted based on the extrapolated curve, forecast milestones, and professional judgment of the taskforce members. This paper provides a framework for MR sensor technology (non-recording applications) to be used for public and private R&D planning, in order to provide guidance into likely MR sensor applications, products, and services expected in the next 15 years and beyond.
1
An international IEEE Magnetics Society roadmap for non-recording MR sensor applications was developed over three years by 22 experts from ten countries and 17 organizations.
2
Each roadmap was analyzed with a logistic growth model to forecast milestone timing and predict new opportunities over the next 15+ years for R&D planning.
3
Five application areas were identified with corresponding MR sensor roadmaps: biomedical, flexible electronics, position sensing and human–computer interaction, non-destructive evaluation and monitoring, and navigation and transportation.
4
MR sensors are promising magnetometer candidates due to high sensitivity, low cost, low power consumption, and small size.
5
Patent and publication analysis established development timescales and extracted critical milestones for MR sensor parameters across applications.

Magnetoresistive (MR) sensors for non-recording applications

Roadmaping of MR sensor development: current status, timescales, critical parameter milestones, predicted opportunities and application-specific growth forecasts for non-recording uses

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2019-03-05
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Authors
Olga Kazakova
Joseph E. Davies
S. H. Liou
Alexander S. Samardak
Alexey V. Ognev
Xiaolu Yin
CheolGi Kim
Chi Wah Leung
S. N. Piramanayagam
Philip W. T. Pong
Shan X. Wang
Chao Zheng
Ke Zhu
Susana Cardoso de Freitas
Jen-Yuan Chang
Peter Eames
Paulo P. Freitas
Pavel Ripka
Kwang‐Ho Shin
Shiyuan Tong
Mean-Jue Tung
Songsheng Xue
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