Significant decrease of the lattice thermal conductivity due to phonon confinement in a free-standing semiconductor quantum well
Значительное снижение решёточной теплопроводности вследствие фононного ограничения в свободно стоящей полупроводниковой квантовой яме
1998-07-15
SCID: 54.1/nfyddkvv
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confined acoustic phononsfree-standing quantum welllattice thermal conductivityphonon confinementphonon group velocity
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Abstract (AI)
Lattice thermal conductivity of a quantum well limited by umklapp, impurity, and boundary scattering was investigated theoretically by taking into account dispersion of confined acoustic-phonon modes. We show that strong modification of phonon group velocities due to spatial confinement leads to a significant increase in the phonon relaxation rates. From the numerical calculations, we predict a decrease by an order of magnitude of the lattice thermal conductivity in a 100-\AA{}-wide free-standing quantum well. Our theoretical results are consistent with recent experimental investigations of the lateral thermal conductivity of nitride/silicon/oxide membranes conducted in our group.
Key Findings
1
A 100-Å-wide free-standing semiconductor quantum well is predicted to exhibit an approximately order-of-magnitude decrease in lattice thermal conductivity.
2
Spatial confinement strongly modifies phonon group velocities, increasing phonon relaxation rates and reducing thermal transport.
3
The theoretical predictions agree with recent measurements of lateral thermal conductivity in nitride/silicon/oxide membranes.
4
Theoretical calculations incorporate confined acoustic-phonon dispersion to evaluate lattice thermal conductivity limited by umklapp, impurity, and boundary scattering.
Research Object
a 100-Å-wide free-standing semiconductor quantum well
Research Subject
the reduction of lattice thermal conductivity caused by phonon confinement, through modified confined-acoustic-phonon dispersion, group velocities, and relaxation rates under umklapp, impurity, and boundary scattering
Publication Details
Publication Date
1998-07-15
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