Octave‐Spanning, Deterministic Single Soliton Generation in 4H‐Silicon Carbide‐On‐Insulator Microring Resonators

Детерминированная генерация одиночных солитонов, охватывающих октаву, в микрокольцевых резонаторах из карбида кремния 4H на изоляторе
Yi Zheng, Liping Zhou, Chengli Wang, Yanjing Zhao, Ailun Yi, Kresten Yvind, Xin Ou, Minhao Pu
2026-04-01

4H-silicon carbide-on-insulatordeterministic single soliton generationdispersion-managed microring resonatorsoctave-spanning soliton microcombsself-referenced frequency combs
ABSTRACT The miniaturization of self‐referencing frequency comb systems enables emerging applications in metrology and spectroscopy. One major challenge in realizing the chip‐scale self‐referencing function is to generate octave‐spanning soliton microcombs with low operation power. Accessing soliton states is also not trivial due to the thermal effect. Though an auxiliary laser was utilized to compensate for the thermal effect, deterministic single soliton generation is still elusive, especially for broadband operation. In this work, dispersion management is performed for a 4H‐silicon carbide‐on‐insulator (SiCOI) multi‐mode microring resonator, benefiting from the submicron‐confinement waveguide layout. The fundamental transverse electric (TE) mode is engineered to anomalous dispersion for two dispersive waves generation over an octave span. While a higher‐order TE mode is engineered to normal dispersion to accommodate the auxiliary light for thermal compensation. The normal dispersion prevents modulation‐instability Kerr comb generation, allowing for a large soliton existence range. We achieve microring resonators with Q up to 5.8 million and sub‐milli‐watt‐threshold Kerr comb generation. Combining the dispersion‐managed design and high Q device, we demonstrate the deterministic generation of a single soliton comb spanning beyond an octave with a low on‐chip power of 60 mW. Our demonstration paves the way to realize chip‐scale, turn‐key, self‐referenced frequency combs.
1
Combining dispersion management with high-Q devices enables deterministic single-soliton generation beyond one octave using only 60 mW on-chip power.
2
Dispersion management in a 4H-silicon-carbide-on-insulator multimode microring engineers anomalous fundamental-TE dispersion and normal higher-order-TE dispersion.
3
Normal dispersion in the higher-order TE mode suppresses modulation-instability Kerr-comb generation and provides a broad soliton existence range for auxiliary thermal compensation.
4
The anomalous fundamental TE mode generates two dispersive waves, enabling an octave-spanning soliton microcomb.
5
The fabricated microring resonators achieve quality factors up to 5.8 million and sub-milliwatt-threshold Kerr-comb generation.

4H-silicon carbide-on-insulator (SiCOI) multimode microring resonators

dispersion engineering and deterministic low-power generation of octave-spanning single-soliton Kerr frequency combs, including thermal compensation and soliton-state accessibility

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2026-04-01
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Yi Zheng
Liping Zhou
Chengli Wang
Yanjing Zhao
Ailun Yi
Kresten Yvind
Xin Ou
Minhao Pu
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