Isotropic Magnetic Purcell Effect
Изотропный магнитный эффект Парселла
2017-12-08
SCID: 54.1/qts8vvp7
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all-dielectric nanocavityextrinsic quantum yieldisotropic magnetic Purcell effectmagnetic dipole emittersilicon nanocavity
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Abstract (AI)
Manipulating the spontaneous emission rate of optical emitters with all-dielectric nanoparticles benefits from their low-loss nature and thus provides a relatively large extrinsic quantum yield. However, such Purcell effect greatly depends on the orientation of the dipole emitter. Here, we introduce the concept of isotropic magnetic Purcell effect with Purcell factors of about 300 and large extrinsic quantum yield (more than 80%) for a magnetic dipole emitter of arbitrary orientation in an asymmetric silicon nanocavity. The extrinsic quantum yield can even be boosted to nearly 100% by utilizing a GaP nanocavity. Isotropy of the Purcell factor is manifested via the orientation-independent emission of the magnetic dipole source. This isotropic Purcell effect is robust against small displacement of the emitter on the order of 10 nm, releasing the requirement of precise alignment in experiments.
Key Findings
1
An asymmetric silicon nanocavity achieves Purcell factors of approximately 300 while maintaining an extrinsic quantum yield above 80%.
2
Replacing silicon with a GaP nanocavity can increase the extrinsic quantum yield to nearly 100%.
3
The effect remains robust for emitter displacements of approximately 10 nm, reducing the need for precise spatial alignment.
4
The isotropic Purcell effect produces orientation-independent emission from the magnetic dipole source.
5
The study introduces an isotropic magnetic Purcell effect for magnetic dipole emitters with arbitrary orientation in asymmetric dielectric nanocavities.
Research Object
magnetic dipole emitter in an asymmetric all-dielectric silicon or GaP nanocavity
Research Subject
orientation-independent magnetic Purcell enhancement, extrinsic quantum yield, and robustness to nanometer-scale emitter displacement
Publication Details
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2017-12-08
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