Microwave permittivity of As and B implanted and annealed silicon
Микроволновая диэлектрическая проницаемость кремния, имплантированного As и B, и подвергнутого отжигу
2009-09-01
SCID: 54.1/qu2fbqr9
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As implanted siliconB implanted siliconcomplex permittivitydielectric lossmicrowave permittivity
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Abstract (AI)
The absorption of energy from electromagnetic fields always involves the conversion of electromagnetic energy into the heat. Dissipated power density is proportional to dielectric loss. In this work we investigate dielectric loss (complex permittivity) of intrinsic and extrinsic Cz and Fz silicon in the X microwave band. The mechanism of the interaction of microwave irradiation with non-polar elemental semiconductors is discussed.
Key Findings
1
Both As- and B-implanted and annealed silicon samples (implied by title) are evaluated for changes in microwave permittivity.
2
Dielectric loss (complex permittivity) of intrinsic and extrinsic Cz and Fz silicon was investigated in the X microwave band.
3
Interaction mechanism of microwave irradiation with non-polar elemental semiconductors (silicon) is analyzed.
4
Study examines microwave energy absorption in silicon as conversion of electromagnetic energy into heat, with dissipated power density proportional to dielectric loss.
Research Object
As- and B-implanted and annealed silicon (intrinsic and extrinsic Cz and Fz silicon samples)
Research Subject
Microwave complex permittivity (dielectric loss) in the X-band and its interaction mechanisms with non-polar elemental semiconductors
Publication Details
Publication Date
2009-09-01
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