Ferroelectric HfO2-based Capacitors for FeRAM: Reliability from Field Cycling Endurance to Retention (invited)

When considering reliability concerns for introducing HfO2-based ferroelectric capacitors into production, polarization sensing issues caused by imprint have been shown to be the most critical. A common model for imprint in hafnium-zirconium oxide ferroelectric thin film capacitors has not yet been widely adopted. In this work, a widely accepted charge injection-based imprint model used for lead zircon ate-titanate thin film capacitors is adj usted and effectively fitted to the data of hafnium-zirconium oxide thin film capacitors. This confirms an interface-driven imprint mechanism for these devices and provides a method for benchmarking ten-year retention.