Applications and Implications of Wide-Bandgap Technologies in Microgrids: A Review
Применение и значение широкозонных технологий в микросетях: обзор
2026-02-24
SCID: 54.1/t4gtmncy
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gallium nitridemicrogrid architecturespower electronicssilicon carbidewide-bandgap power semiconductors
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Abstract (AI)
The next evolution in power electronics is being driven by wide-bandgap materials—particularly silicon carbide and gallium nitride power semiconductor devices—which increase efficiency and power density, thus ensuring their integration into high-performance systems. One system poised to receive benefits from this progression is microgrids. This paper reviews common microgrid architectures, components, voltage and power levels, and power electronics to establish where wide-bandgap materials, specifically silicon carbide and gallium nitride, may benefit current and future microgrids.
Key Findings
1
Microgrids are identified as systems likely to benefit from integrating wide-bandgap power semiconductor technologies.
2
The paper evaluates potential benefits of silicon carbide and gallium nitride technologies for current and future microgrid power electronics.
3
The review maps common microgrid architectures, components, voltage levels, and power levels to identify suitable wide-bandgap applications.
4
Wide-bandgap silicon carbide and gallium nitride devices increase power-electronic efficiency and power density.
Research Object
microgrids incorporating power-electronic components
Research Subject
the potential applications and implications of wide-bandgap silicon carbide and gallium nitride power semiconductor devices for microgrid efficiency, power density, and future integration
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2026-02-24
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