High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams
Высокомощные (>0,5 Вт в непрерывном режиме) диодно-накачиваемые полупроводниковые лазеры с вертикальным внешним резонатором и поверхностным излучением с круговыми пучками TEM₀₀
1997-08-01
SCID: 54.1/td2azn4j
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InGaAs-GaAsP-GaAs multiquantum wellVECSELcontinuous-wave 1004 nm laserdiode-pumped laseroptically pumped semiconductor laser
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Abstract (AI)
We report demonstration of a new high-power semiconductor laser technology, the optically pumped semiconductor (OPS) vertical-external-cavity surface-emitting laser (VECSEL). Using diode laser pump, an OPS-VECSEL laser with a strain-compensated InGaAs-GaAsP-GaAs multiquantum-well (MQW) structure operated continuous-wave (CW) near /spl lambda//spl sim/1004 nm with record output power of 0.69 W in a TEM/sub 11/ mode, 0.52 W in a TEM/sub 00/ mode, and 0.37 W coupled to a single-mode fiber. It is feasible to produce greater than 1 W of power in a diffraction-limited circular beam from an efficient, compact, manufacturable and reliable OPS-VECSEL laser.
Key Findings
1
Demonstrated a high-power optically pumped semiconductor VECSEL using diode-laser pumping and a strain-compensated InGaAs-GaAsP-GaAs MQW structure.
2
The OPS-VECSEL operated continuous-wave near 1004 nm and produced a record output power of 0.69 W in a TEM11 mode.
3
The laser generated 0.52 W in a circular TEM00 mode and 0.37 W coupled into a single-mode fiber.
4
The results indicate feasibility of exceeding 1 W in a diffraction-limited circular beam using an efficient, compact, manufacturable, and reliable OPS-VECSEL.
Research Object
Diode-pumped optically pumped semiconductor vertical-external-cavity surface-emitting lasers (OPS-VECSELs) based on a strain-compensated InGaAs-GaAsP-GaAs multiquantum-well structure
Research Subject
Continuous-wave high-power output, transverse-mode quality, circular-beam generation, and single-mode-fiber coupling near 1004 nm
Publication Details
Publication Date
1997-08-01
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