Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs
Влияние утечки через буферный слой на внутреннюю надёжность AlGaN/GaN HEMT с номинальным напряжением 650 В
2015-12-01
SCID: 54.1/tdjx7fav
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650V AlGaN/GaN HEMTsCN acceptorsbuffer leakagecurrent DLTSintrinsic reliability
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Abstract (AI)
The role of buffer traps (identified as CN acceptors through current DLTS) in the off-state leakage and dynamic Ron of 650V rated GaN-on-Si power devices is investigated. The dynamic Ron is strongly voltage-dependent, due to the interplay between the dynamic properties of the CN traps and the presence of space-charge limited current components. This results in a complete suppression of dyn Ron degradation under HTRB conditions between 420V and 850V.
Key Findings
1
Buffer traps identified as CN acceptors by current DLTS contribute to off-state leakage and dynamic on-resistance in 650V GaN-on-Si HEMTs.
2
Dynamic on-resistance is strongly voltage-dependent because CN-trap dynamics interact with space-charge-limited current components.
3
The study links buffer leakage mechanisms to the intrinsic reliability behavior of 650V AlGaN/GaN power devices.
4
Under high-temperature reverse-bias conditions, dynamic on-resistance degradation is completely suppressed from 420V to 850V.
Research Object
650V-rated GaN-on-Si AlGaN/GaN HEMTs with CN-acceptor buffer traps
Research Subject
The effects of CN buffer-trap dynamics and space-charge-limited current on off-state leakage and voltage-dependent dynamic on-resistance, including reliability under HTRB conditions
Publication Details
Publication Date
2015-12-01
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