On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs
О взаимосвязи между эффектом излома и эффективной подвижностью в InAlN/GaN-транзисторах с высокой подвижностью электронов
2014-10-01
SCID: 54.1/u93jnw99
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InAlN/GaN HEMTseffective mobilitykink effectkink voltageshallow traps
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Abstract (AI)
This paper reports on the kink effect observed in InAlN/GaN high electron mobility transistors. Electrical characterizations were carried out to point out the influence of this phenomenon on transistor behaviour. It is demonstrated that the kink effect is directly correlated to shallow traps located under the conduction band. A model is proposed to highlight the influence of scattering effects on the effective mobility, permitting to describe accurately the locus of the so-called kink voltage for a gate bias close to the pinch-off voltage.
Key Findings
1
Electrical characterization demonstrates that the kink phenomenon significantly influences transistor behavior.
2
The kink effect in InAlN/GaN HEMTs is directly correlated with shallow traps located below the conduction band.
3
The model accurately describes the kink-voltage location for gate biases near the pinch-off voltage.
4
The proposed model incorporates scattering effects to explain their impact on effective mobility.
5
The study establishes a correlation between the kink effect and effective mobility in InAlN/GaN HEMTs.
Research Object
InAlN/GaN high electron mobility transistors (HEMTs) exhibiting the kink effect
Research Subject
The correlation between the kink effect, shallow traps under the conduction band, scattering effects, and effective mobility, including the kink-voltage behavior near pinch-off
Publication Details
Publication Date
2014-10-01
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