GaN Advantage over MOSFET in Inverters for Drones. An Experimental Comparison
Преимущество GaN над MOSFET в инверторах для дронов: экспериментальное сравнение
2024-05-17
SCID: 54.1/vybvu7sp
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BLDC motor drivesGaN FETMOSFET inverterUAV agricultural droneswide-bandgap devices
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Abstract (AI)
Battery-powered unmanned aerial vehicles (UAV) are revolutionizing today’s agriculture, where they are used to spray fertilizers and more. These drones use motor drives that need to be lightweight and efficient to maximize working battery life and extend flight time between recharging. Wide-bandgap devices, and specifically Gallium Nitride (GaN) FETs, have been demonstrated to improve BLDC motor drives in e-mobility and robotic applications [1], [2]. This paper presents the experimental tests to compare a GaN FET inverter with equivalent MOSFET inverters driving a permanent magnet motor for UAV agricultural drones.
Key Findings
1
GaN FET inverters were experimentally compared to equivalent MOSFET inverters driving a permanent magnet motor for UAV agricultural drones.
2
GaN devices are presented as an improvement for BLDC motor drives in e-mobility and robotics, motivating their evaluation for drones.
3
The study targets lightweight and efficient motor drives to maximize battery life and flight time in battery-powered UAVs.
Research Object
Inverter power electronics (GaN FET inverter and equivalent MOSFET inverter) driving a permanent magnet motor for UAV agricultural drones
Research Subject
Experimental comparison of performance (efficiency, weight, and suitability for lightweight motor drives) of GaN FET-based inverter versus MOSFET-based inverter when driving a permanent magnet motor in battery-powered UAV drones
Publication Details
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2024-05-17
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