Temperature dependence of the radiative recombination coefficient in silicon

The temperature dependence of the intrinsic radiative recombination coefficient B in silicon was measured from 100 to 400 °K. In contrast to previous calculations, B decreases with temperature. For interpretation of the measurements, a unique theory of the indirect radiative band-to-band and free exciton recombination is given. The decrease of B with increasing T is due to the decrease to the exciton concentration and of the Coulomb-enhancement of the band-to-band recombination rate. The latter however is smaller than the exciton recombination part even at room temperature. The constants of the exciton and band-to-band recombination are determined.