High-Performance T-Gated GaN-HEMT on Silicon Wafer with Step Graded Strain Relief Layered-InGaN Buffer for Future Power Switching Systems

A. Akshaykranth, J. Ajayan, Sandip Bhattacharya, Asisa Kumar Panigrahy
2025-08-01
SCID:  54.1/ze8yqyw2
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2025-08-01
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A. Akshaykranth
J. Ajayan
Sandip Bhattacharya
Asisa Kumar Panigrahy
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