Effects of 4.5 MeV and 63 MeV proton irradiation on carrier lifetime of InAs/InAsSb type-II superlattices (Conference Presentation)

Type-II strained-layer superlattices (T2SLs) are receiving increased interest as mid-wave infrared (MWIR) and long-wave infrared detector absorbers due to their potential Auger suppression and ability to be integrated into complex device structures. Although T2SLs show promise for use as infrared detectors, further investigation into the effects of high energy particle radiation is necessary for space-based applications. In this presentation, the effects of both 4.5 MeV and 63 MeV proton radiation on the carrier lifetime of MWIR InAs/InAsSb T2SLs will be shown. The 63 MeV proton radiation study will focus on the carrier lifetime of MWIR InAs/InAsSb T2SL samples of varying donor density. These results reveal a Shockley-Read-Hall (SRH) lifetime associated with a radiation induced defect level, which is not dependent on the donor density of the T2SL. Using 4.5 MeV proton radiation, the dependence of carrier lifetime on relative trap density in MWIR T2SLs samples is studied by varying the particle fluence. A comparison of these two radiation studies shows similar lifetime effects that will be discussed in detail. These results give insight into the viability of Ga-free T2SLs for space applications.