A robust and area-efficient guard ring edge termination technique for 4H-SiC power MOSFETs

Bo Zhang, Wanjun Chen, Xiaochuan Deng, Chengzhan Li, Yuanxu Guo, Tianxiang Dai, Ximing Chen, Yourun Zhang

2017-06-15

SCID: 54.1/zpmdgu8d

Publication Details

DOI

10.1016/j.mssp.2017.06.019

Publication Date

2017-06-15

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Authors

Bo Zhang

Wanjun Chen

Xiaochuan Deng

Chengzhan Li

Yuanxu Guo

Tianxiang Dai

Ximing Chen

Yourun Zhang

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