Quantum confinement effects in strained silicon-germanium alloy quantum wells
Эффекты квантового ограничения в квантовых ямах из напряжённого сплава кремний–германий
1992-04-27
SCID: 54.1/zvbjnu8e
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Luttinger–Kohn Hamiltonianhole confinement energiesquantum confinementquantum wellsstrained silicon-germanium
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Abstract (AI)
We report the first detailed study of quantum confinement shifts of band-edge photoluminescence energies in Si/strained Si1−xGex/Si single quantum wells. A quantum confinement energy of up to 45 meV has been observed for quantum wells as small as 33 Å in width. The experimental results are in good agreement with a calculation of the hole confinement energies. The hole energy levels in quantum wells were obtained by numerically solving effective-mass equations with proper matching boundary conditions at interfaces using a 6×6 Luttinger–Kohn Hamiltonian. Both strain and spin-orbit interactions were included in the calculation.
Key Findings
1
Hole energy levels were calculated by numerically solving effective-mass equations with interface-matching boundary conditions using a 6×6 Luttinger–Kohn Hamiltonian.
2
Measured photoluminescence shifts agree well with calculated hole-confinement energies.
3
Quantum-confinement energies reach up to 45 meV in quantum wells as narrow as 33 Å.
4
The calculations explicitly incorporate both strain and spin–orbit interactions.
5
The study provides the first detailed investigation of quantum-confinement shifts in band-edge photoluminescence energies for Si/strained-SiGe/Si quantum wells.
Research Object
Si/strained Si1−xGex/Si single quantum wells
Research Subject
Quantum-confinement-induced shifts of band-edge photoluminescence energies and hole confinement energy levels, including strain and spin–orbit effects
Publication Details
Publication Date
1992-04-27
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