Enhanced Hole Accumulation Effect in P-GaN HEMTs With Al(Ga)N Gate-Insertion-Layer Under Heavy Ions Irradiation

Xin Zhou, Bo Zhang, Qi Zhou, Jianggen Zhu, YANG Fukang, Shuting Huang, Huan Gao, Keping Wu, David Zhou
2026-06-23
SCID:  54.1/zz4fpy7j
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2026-06-23
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Xin Zhou
Bo Zhang
Qi Zhou
Jianggen Zhu
YANG Fukang
Shuting Huang
Huan Gao
Keping Wu
David Zhou
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