Low-Loss Integrated Photonic Switch Using Subwavelength Patterned Phase Change Material

Интегрированный фотонный переключатель с низкими потерями на основе субволновой структуры материала с фазовым переходом
Mo Li, Huan Li, Xiaohang Zhang, Ichiro Takeuchi, Changming Wu, Heshan Yu
2018-12-19

Ge–Sb–Te (GST)integrated photonic switchphase change materialsilicon nitride microring resonatorsubwavelength patterning
Efficient integrated photonic switches play a critical role in both interchip optical interconnects and data center networks that need to be dynamically reconfigured. Here, we demonstrate a 1 × 2 switch using phase change material Ge–Sb–Te (GST) combined with a silicon nitride microring resonator. The switch operates by utilizing the dramatic difference in the optical refractive index and extinction coefficient between the crystalline and amorphous phases of GST. By patterning and encapsulating the GST into subwavelength structures, the device achieves a low insertion loss of less than 1 dB in both output ports and can be switched reliably both photothermally and electrothermally.
1
A 1×2 integrated photonic switch combines phase-change GST with a silicon nitride microring resonator.
2
Subwavelength patterning and encapsulation of GST reduce insertion loss to below 1 dB at both output ports.
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Switching exploits the large refractive-index and extinction-coefficient contrast between crystalline and amorphous GST phases.
4
The switch operates reliably using either photothermal or electrothermal switching methods.

A 1 × 2 integrated photonic switch combining subwavelength-patterned Ge–Sb–Te (GST) phase-change material with a silicon nitride microring resonator

Low-loss optical switching based on the phase-dependent refractive index and extinction coefficient of GST, including insertion loss and reliable photothermal/electrothermal switching

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2018-12-19
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Authors
Mo Li
Huan Li
Xiaohang Zhang
Ichiro Takeuchi
Changming Wu
Heshan Yu
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